tsm 100n06 60v n-channel power mosfet 1/6 version: a12 to - 220 product summary v ds (v) r ds(on) (m ? ) i d (a) 60 6.7 @ v gs =10v 100 features advanced trench technology low r ds(on) 6.7m ? (max.) low gate charge typical @ 81nc (typ.) low crss typical @ 339pf (typ.) block diagram n-channel mosfet ordering information part no. package packing tsm100n06cz c0 to-220 50pcs / tube absolute maximum rating (ta = 25 o c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 60 v gate-source voltage v gs 20 v continuous drain current t c =25c i d 100 (3) a t c =70c 80 t a =25c 14 t a =70c 11 drain current-pulsed note 1 i dm 400 a avalanche current, l=0.1mh i as 71 a avalanche energy, l=0.1mh e as , e ar 400 mj maximum power dissipation t c =25c p d 167 w t c =70c 107 t a =25c 2 t a =70c 1.3 storage temperature range t stg -55 to +150 c operating junction temperature range t j -55 to +150 c * limited by maximum junction temperature thermal performance parameter symbol limit unit thermal resistance - junction to case r ? jc 0.8 o c/w thermal resistance - junction to ambient r ? ja 62.5 o c/w notes: surface mounted on fr4 board t 10sec pin definition : 1. gate 2. drain 3. source
tsm 100n06 60v n-channel power mosfet 2/6 version: a12 electrical specifications (ta = 25 o c unless otherwise noted) parameter conditions symbol min typ max unit static drain-source breakdown voltage v gs = 0v, i d = 250ua bv dss 60 -- -- v drain-source on-state resistance v gs = 10v, i d = 30a r ds(on) -- 5.7 6.7 m ? gate threshold voltage v ds = v gs , i d = 250ua v gs(th) 2 3 4 v zero gate voltage drain current v ds = 48v, v gs = 0v i dss -- -- 1 ua gate body leakage v gs = 20v, v ds = 0v i gss -- -- 100 na dynamic total gate charge v ds = 30v, i d = 30a, v gs = 10v q g -- 81 -- nc gate-source charge q gs -- 23 -- gate-drain charge q gd -- 24 -- input capacitance v ds = 30v, v gs = 0v, f = 1.0mhz c iss -- 4382 -- pf output capacitance c oss -- 668 -- reverse transfer capacitance c rss -- 339 -- switching turn-on delay time v gs = 10v, v ds = 30v, r g = 3.3 ? t d(on) -- 25 -- ns turn-on rise time t r -- 19 -- turn-off delay time t d(off) -- 85 -- turn-off fall time t f -- 43 -- drain-source diode characteristics and maximum rati ng drain-source diode forward voltage v gs =0v, i s =20a v sd - 0.8 1.3 v reverse recovery time i s = 30a, t j =25 o c di/dt = 100a/us t fr 36 ns reverse recovery charge q fr 53 nc notes: 1. pulse test: pulse width 300 s, duty cycle 2%. 2. r ja is the sum of the junction-to-case and case-to-amb ient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. r jc is guaranteed by design while r ca is determined by the user's board design. r ja shown below for single device operation on fr-4 in still air 3. calculated continuous current based on maximum a llowable junction temperature, package limitation c urrent is 75a
tsm 100n06 60v n-channel power mosfet 3/6 version: a12 electrical characteristics curve (ta = 25 o c, unless otherwise noted) output characteristics gate threshold voltage gate source on resistance drain-source on resistance drain-source on-resistance source-drain diode forward voltage
tsm 100n06 60v n-channel power mosfet 4/6 version: a12 electrical characteristics curve (ta = 25 o c, unless otherwise noted) power derating drain current vs. junction temperature safe operation area transient thermal impedance capacitance gate charge
tsm 100n06 60v n-channel power mosfet 5/6 version: a12 to-220 mechanical drawing to-220 dimension dim millimeters inches min max min max a 10.000 10.500 0.394 0.413 b 3.740 3.910 0.147 0.154 c 2.440 2.940 0.096 0.116 d - 6.350 - 0.250 e 0.381 1.106 0.015 0.040 f 2.345 2.715 0.092 0.058 g 4.690 5.430 0.092 0.107 h 12.700 14.732 0.500 0.581 j 14.224 16.510 0.560 0.650 k 3.556 4.826 0.140 0.190 l 0.508 1.397 0.020 0.055 m 27.700 29.620 1.060 1.230 n 2.032 2.921 0.080 0.115 o 0.255 0.610 0.010 0.024 p 5.842 6.858 0.230 0.270
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